| PART |
Description |
Maker |
| TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
| TC58NVG6D2GTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58256DC |
CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|
| MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C80 |
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PQCC32
JT 21C 21#16 SKT RECP 1M X 8 OTPROM, 90 ns, PDSO32
Single Output LDO, 100mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 1M X 8 OTPROM, 120 ns, PDSO32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 120 ns, PQCC32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 100 ns, PQCC32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PDIP32
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
|
